Zno as iivi semiconductor is promising for various technological please purchase pdf splitmerge on. Request pdf recent development and progress of znobased optoelectronic devices novel vapor cooling condensation system was designed and used to grow znobased thin films for fabricating. Zinc oxide based nano materials and devices intechopen. Article availability in different formats pdf, epub, full text. Ga 2 o 3 microbelts also has the highest external quantum efficiency up to 8. Because of the polarization of ions in zno that has noncentral symmetry, a piezoelectric potential piezopotential is created in thecrystalbyapplyingastress.
Optoelectronics devices and applications intechopen. Zinc oxide has emerged as an attractive material for various applications in electronics, optoelectronics, biomedical and sensing. Electronic and optoelectronic devices impact many areas of society, from simple household appliances and multimedia systems to communications, computing, and medical instruments. A crossed heterojunction of an ntype zno nanowire and a ptype zn3p2 nanowire has been characterized, and it offers a great potential. Zinc oxide zno is a transparent conductive oxide and it has been considered as a promising material for technological applications, such as photovoltaics, optoelectronics and sensing 1,2, in particular as a window for solar cells based on silicon as well as in lasers and 3light emitting diodes leds,4. A flexible uv photodetector with a high onoff ratio is extremely important for environmental sensing, optical communication, and flexible optoelectronic devices. Recently, zno has been gathering great interest of researchers in nanoscience due to its diverse and versatile morphologies such as nanoparticles np, nanowires nw, nanorods, nanotubes, nanohelixes, etc. Znobased semiconductors as building blocks for active. Zno nanorods grown on pgan using hydrothermal synthesis. Zno is already used as transparent electrodes for solar cells and flat panel displays and realization of varistors. Zno nanorods grown on pgan using hydrothermal synthesis and. Ultrasensitive fiberbased zno nanowire network ultraviolet. Agzno multilayer electrodes prepared by ion beam sputtering for.
Several approaches to improve the performance of 1d zno based devices, including surface passivation, localized surface plasmons, and the piezophototronic effect, are summarized. Optoelectronic devices based on znoznmgo request pdf. Research involving zno is being given renewed attention in. Zno is a semiconductor with multifunctional applications in optoelectronic devices such as uv photodetectors, optoelectronic gas sensors, and solar cells. Ligand exchange of colloidal zno nanocrystals from the. Recently,byutilizingthecouplingof piezoelectric and semiconducting properties of zno, piezotronic devices based on zno nws, such as nanogenerators, 17,18 piezo. The large excitonic binding energy of 60 mev at room temperature as compared to 25 mev of gallium nitride, an iiiv compound makes zno an efficient light emitter in the ultraviolet uv spectral region and hence favourable for optoelectronic applications. Optoelectronic semiconductor devices principals and. Zno has distinguished and interesting electrical and optical properties and is considered to be a potential. Several approaches to improve the performance of 1d znobased devices, including surface passivation, localized surface plasmons, and the piezophototronic effect, are summarized. Pdf zno nanostructures for optoelectronic applications. The znoagzno 35 nm10 nm20 nm multilayer electrode had a. Nano letters singlecrystalline branched zinc phosphide. Recently,byutilizingthecouplingof piezoelectric and semiconducting properties of zno, piezotronic devices.
Most semiconductor optoelectronic devices are pnjunction diodes, and their performance depends on the. Based on electromechanical coupling, wang proposed the piezotronic effect 34, 35 by using piezoelectric polarization charges to controlmodify the transportation of carriers within the interface andor junctions. In addition, cu znobased catalysts can convert syngas h2, co, and co2 into methanol. Devices based on heterojunction or schottky junction tend to have a high gain. Colloidal zinc oxide zno nanocrystals generated from the high temperature and nonaqueous approache are attractive for use in solutionprocessed electrical and optoelectronic devices. Because of the difficulty in fabricating ptype zno, due to low solubility of dopants, most znobased optoelectronic devices rely on heterojunctions between ntype zno and ptype semiconducting materials, the most common choice being ptype silicon. Because of the difficulty in fabricating ptype zno, due to low solubility of dopants, most zno based optoelectronic devices rely on heterojunctions between ntype zno and ptype semiconducting materials, the most common choice being ptype silicon. Given the demand for ever more compact and powerful systems, there is growing interest in the development of nanoscale devices that could enable new functions.
Znobased semiconductors as building blocks for active devices. Optoelectronics or optronics is the study and application of electronic devices and systems that source, detect and control light, usually considered a subfield of photonics. However, following a rediscovery of zno and its potential applications in the 1950s, science and industry alike began to realize that zno had many interesting novel properties that were worthy of further investigation. Zno, solgel, energy device, optical device, characterization supplementary material for this article is available online abstract the rapid growth in green technology has resulted in a marked increase in the incorporation of zno in energy and optoelectronic devices. Some of the more exotic morphologies, such as tetrapod structures shown in fig. In this work, we demonstrate the onchip growth of nanostructured zno sensing films containing abundant nanojunctions for the fabrication of optoelectronic sensors that. Highly flexible znoagzno conducting electrode for organic. Despite the significant progress on zno films and nanostructures, the fabrication of zno pn homojunction devices has been inhibited by the difficulty. Optoelectronics devices based on zno thin films and nanostructures are.
Besides these established applications, zno and its ternary alloys are now also being considered as potential materials for optoelectronic applications, such as light emitting diodes, photovoltaics, sensors, displays, etc. Semiconductor nanowires nws or nanobelts nbs have attracted more and more attention due to their potential application in novel optoelectronic devices. This work opens a new avenue for developing diverse graphenebased optoelectronic devices. Optoelectronics devices based on zinc oxide thin films and. Zinc oxide zno based materials are potential candidates for optoelectronic applications, especially for blue to ultraviolet light emitting devices. In this project, i will try to provide an introduction to optoelectronic pnjunction devices from the point of view of semiconductor materials properties, operating principles, applications and fabrication. Optoelectronics is based on the quantum mechanical effects of light on electronic materials. Ligand exchange of colloidal zno nanocrystals from the high. The optoelectronic gas sensors based on svmos 2 exhibited enhanced performance to ppb level of no 2 under nir light illumination at room temperature. Zno nanostructures, defects, and devices the interest in zno structures has increased drastically in recent years. Solgel synthesized zno for optoelectronics applications. They address and overcome the physical and economic limits of current microelectronic industry and will lead to reduced power consumption and largely increased device speed in next generation electronics. Novel optoelectronic devices based on single semiconductor. Zno nanowire arraybased optoelectronic devices core.
Flexible difunctional pressure and light sensors based on. Optoelectronic response of the nznop4hsic heterostructure defect contribution. Review of ganzno hybrid structures based materials and devices. The commercial success of ganbased optoelectronic and electronic devices trig the interest in znobased devices 24. Synthesis and characterization of zno nanostructures.
A short note on zno based optoelectronics devices crimson. At forward biases, the gnrsnw heterojunction leds emitted light from ultraviolet 380 nm to red 705 nm, which were determined by the bandgaps of the involved snws. Optoelectronic devices are electricaltooptical or opticalto. Zno nanowire array based optoelectronic devices are discussed in this dissertation. The possible importance of zincoxidebased optoelectronic devices is. A hybrid structure hs made of onedimensional zno nanorods nrs and a twodimensional synthesized graphene sheet was successfully constructed in this study. Investigation of zno heterostructures for optoelectronic devices by. Zinc oxide zno powder has been widely used as a white paint pigment and industrial processing chemical for nearly 150 years. Department of science and technology itn, campus norrkoping, linkoping university, se601 74 norrkoping, sweden. Recent development and progress of znobased optoelectronic. In this work, a flexible fiber based uv photodetector with an ultrahigh onoff ratio is developed by utilizing the synergism between interface and surface gating effects on a zno nanowire network structure.
Optoelectronic devices fabricated using individual nanowires demonstrate a high sensitivity and rapid response to impinging light. This chapter is devoted to the wide variety of optoelectronic devices that are made in semiconductor materials. In addition, through functionalization with zno quantum dots, the svmos 2 zno nanocomposites exhibited a further enhancement in responses with fast responserecovery rates, full reversibility, and. Zinc oxide materials for electronic and optoelectronic device. Zno has been widely investigated for its potential in optoelectronic devices such as varistors, uv sensors, biosensors 9, optical wave guides, uv. The structural and optical properties of the asgrown zno rods were investigated by xray diffraction xrd and photoluminescence pl spectra. This dissertation deals with studies covering from the.
Zno nanostructures can be grown in a variety of morphologies and by a number of different methods. The feasibility to tune the band structure of znosi heterojunction by selecting a proper interlayer shows great advantage in improving the performance of the znobased optoelectronic devices. Zno is a leading candidate for the next generation of electronics, and its biocompatibility makes it viable for medical devices. Nwbased optoelectronic devices have been widely inves. Oct 29, 2010 nitride semiconductor materials used in lightemitting diodes and lasers are usually grown on singlecrystal sapphire substrates with intermediate buffer layers. The onoff ratio of the fiberbased zno nanowire network uv photodetector reaches 1. Zno based heterostructures for optoelectronic applications. Heteroepitaxy of zno on gan and its implications for.
This book covers recent advances including crystal growth, processing and doping and also discusses the problems and issues that seem to be impeding the commercialization of devices. Zinc oxide zno has a long history of usage in electronics. Onedimensional zno nanostructurebased optoelectronics. The zno research at rutgers pursued both optoelectronic and piezoelectric applications. Zno nanostructures, defects, and devices the interest in zno structures has increased drastically in recent. Intense research by many different groups has focused on novel nanostructures with different shapes ranging from nanowires to nanobelts and even nanosprings.
Nitride semiconductor materials used in lightemitting diodes and lasers are usually grown on singlecrystal sapphire substrates with intermediate buffer layers. An improved zno led device was grown and characterized. This work opens a new avenue for developing diverse graphene based optoelectronic devices. The energy of the valenceband maximum vbm was set to zero. In the design of znobased optoelectronic devices, cationsubstituted zno serves as essential components for the desired device functions.
The hs exhibited high transmittance approximately 75%. Therefore, the investigation of currently available. Zno is naturally an ntype semiconductor due to oxygen vacancies and zinc interstitials 3. Onchip grown zno nanosheetarray with interconnected. Zinc oxide materials for electronic and optoelectronic. Review of ga2o3based optoelectronic devices sciencedirect.
In this work, a flexible fiberbased uv photodetector with an ultrahigh onoff ratio is developed by utilizing the synergism between interface and surface gating effects on a zno nanowire network structure. Zno nanowire arraybased optoelectronic devices are discussed in this dissertation. Important applications of 1d zno nanostructures in optoelectronic devices are described. Furthermore, znmgo can be used in quantum well structures, in form of znmgoznoznmgo repetitions, assuring carrier con. Novel znobased ternary oxides for optoelectronic applications. The attractive features of zno for optoelectronic applications, in addition to its wide band gap similar to that of gan, are its high exciton binding energy 60 mev and the availability of bulk zno single crystals. Several approaches to improve the performance of 1d znobased. Many although not all involve the absorption and emission of light, and most are based around the surprisingly versatile structure mentioned at the end of chapter 11, the pn junction diode. Onedimensional zno nanostructures have great potential applications in the fields of optoelectronic and sensor devices. However, zno has great advantages for light emitting diodes leds and laser diodes lds over the currently used semiconductors. Onedimensional 1d nanostructures have been the focus of current researches due to their unique physical properties and potential applications in nanoscale electronics and optoelectronics. This new uv sensor also has a high resolution to uv light intensity change in the nw cm2 range.
Optoelectronic technology is the application of electronic devices that source, detect and control light, usually considered a subfield of photonics. The uniform zno nrs were obtained by hydrothermal method and grown on a graphene surface that had been transferred to a polyethylene terephthalate substrate. Apr, 2012 developing novel highperformance nano optoelectronic devices is not only important in diverse device applications, but also has significant meaning in exploring and realizing optoelectronic integration. Znobased optoelectronic devices exhibit interesting and attractive properties, many of which originate from the electronic structures inherent to oxides. Flexible difunctional pressure and light sensors based. Enhancing light emission of zno microwirebased diodes by. Ligand exchange of colloidal zno nanocrystals from the high temperature and nonaqueous. Unlike the majority of electronic devices, which are silicon based, optoelectronic devices are predominantly made using iiiv semiconductor compounds such as gaas, inp, gan, and gasb, and their alloys due to their directband gap. Zno as a nanomaterial has gained substantial interest in the research area of wide bandgap semiconductors and is considered to be one of the major candidates for electronic and photonic applications. Xingliang dai, sai bai, yizheng jin, zhizhen ye and xiaojun guo, ligand exchange of colloidal zno nanocrystals from the high temperature and nonaqueous approach, nanomicro lett. Alloying zno with cd, on the other hand, decreases the band gap.
The wurtzite crystal structure of zno with the lattice parameters a and c indicated in a, and the calculated band structure of zno. Despite the significant progress on zno films and nanostructures, the fabrication of zno pn homojunction devices has been inhibited by the difficulty of fabrication stable and high quality p type doping zno. Mar 29, 2010 onedimensional 1d nanostructures have been the focus of current researches due to their unique physical properties and potential applications in nanoscale electronics and optoelectronics. Znosi heterojunction are of particular interest in optoelectronic devices. Herein, zno, cds, and cdse nws were employed for demonstration.
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